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IXTA 16N50P IXTP 16N50P
IXTQ 16N50P
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
TO-263 (IXTA) Outline
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
R G = 10 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
9
16
2250
240
12
24
28
70
25
43
15
12
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.42 ° C/W
R thCS
R thCS
(TO-220)
(TO-3P)
0.25
0.21
° C/W
° C/W
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 16 A
-di/dt = 100 A/ μ s
400
16
48
1.5
A
A
V
ns
TO-220 (IXTP) Outline
TO-3P Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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